In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现在氮化镓
具有室温铁磁性
性质，被预期能运用在磁性记忆体元件和积体
路。
阻
性;;;阻器;介质;压;,感应;，热量;]阻负载In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现在氮化镓具有室温铁磁性性质，被预期能运用在磁性记忆体元件和积体路。
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